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www.irf.com 1 09/10/07 IRFB4227pbf notes through are on page 8 description hexfet ? power mosfet

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s d g to-220ab d s d g gds gate drain source v ds max 200 v v ds (avalanche) typ. 240 v r ds(on) typ. @ 10v 19.7 m i rp max @ t c = 100c 130 a t j max 175 c key parameters absolute maximum ratings parameter units v gs gate-to-source voltage v i d @ t c = 25c continuous drain current, v gs @ 10v a i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current i rp @ t c = 100c repetitive peak current p d @t c = 25c power dissipation w p d @t c = 100c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range soldering temperature for 10 seconds mounting torque, 6-32 or m3 screw n thermal resistance parameter typ. max. units r jc junction-to-case CCC 0.45 r cs case-to-sink, flat, greased surface 0.50 CCC c/w r ja junction-to-ambient CCC 62 max. 46 260 65 30 130300 -40 to + 175 10lb in (1.1n m) 330190 2.2 features advanced process technology key parameters optimized for pdp sustain, energy recovery and pass switch applications low e pulse rating to reduce power dissipation in pdp sustain, energy recovery and pass switch applications low q g for fast response high repetitive peak current capability for reliable operation short fall & rise times for fast switching 175c operating junction temperature for improved ruggedness repetitive avalanche capability for robustness and reliability class-d audio amplifier 300w-500w (half-bridge) downloaded from: http:///
2 www.irf.com s d g electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 200 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 170 CCC mv/c r ds(on) static drain-to-source on-resistance CCC 19.7 24 m ? v gs(th) gate threshold voltage 3.0 CCC 5.0 v ? v gs(th) / ? t j gate threshold voltage coefficient CCC -13 CCC mv/c i dss drain-to-source leakage current CCC CCC 20 a CCC CCC 1.0 ma i gss gate-to-source forward leakage CCC CCC 100 na gate-to-source reverse leakage CCC CCC -100 g fs forward transconductance 49 CCC CCC s q g total gate charge CCC 70 98 nc q gd gate-to-drain charge CCC 23 CCC t d(on) turn-on delay time CCC 33 CCC ns t r rise time CCC 20 CCC t d(off) turn-off delay time CCC 21 CCC t f fall time CCC 31 CCC t st shoot through blocking time 100 CCC CCC ns e pulse energy per pulse j c iss input capacitance CCC 4600 CCC c oss output capacitance CCC 460 CCC pf c rss reverse transfer capacitance CCC 91 CCC c oss eff. effective output capacitance CCC 360 CCC l d internal drain inductance CCC 4.5 CCC between lead, nh 6mm (0.25in.) l s internal source inductance CCC 7.5 CCC from package avalanche characteristics parameter units e as single pulse avalanche energy mj e ar repetitive avalanche energy mj v ds(avalanche) repetitive avalanche voltage v i as avalanche current a diode characteristics parameter min. typ. max. units i s @ t c = 25c continuous source current CCC CCC 65 (body diode) a i sm pulsed source current CCC CCC 260 (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 100 150 ns q rr reverse recovery charge CCC 430 640 nc v dd = 100v i d = 46a r g = 2.5 ? v gs = 10v CCC 570 CCC CCC 910 CCC 3339 CCCCCC 240 CCC typ. max. ? = 1.0mhz, CCC 140 t j = 25c, i f = 46a, v dd = 50v di/dt = 100a/s t j = 25c, i s = 46a, v gs = 0v showing the integral reverse p-n junction diode. conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 46a v ds = v gs , i d = 250a v ds = 200v, v gs = 0v v gs = 0v, v ds = 0v to 160v v ds = 200v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v gs = 0v l = 220nh, c= 0.4f, v gs = 15v mosfet symbol v ds = 25v, i d = 46a v dd = 100v, i d = 46a, v gs = 10v conditions and center of die contact v dd = 160v, v gs = 15v, r g = 4.7 ? v ds = 160v, r g = 4.7 ?, t j = 25c l = 220nh, c= 0.4f, v gs = 15v v ds = 160v, r g = 4.7 ?, t j = 100c v ds = 25v downloaded from: http:///
www.irf.com 3 fig 6. typical e pulse vs. drain current fig 5. typical e pulse vs. drain-to-source voltage fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 3.0 4.0 5.0 6.0 7.0 8.0 v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 1000.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 25v 60s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.0 1.0 2.0 3.0 4.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 46a v gs = 10v 130 140 150 160 170 180 190 i d, peak drain current (a) 0 200 400 600 800 1000 e n e r g y p e r p u l s e ( j ) l = 220nh c = variable 100c 25c 110 120 130 140 150 160 170 v ds, drain-to -source voltage (v) 100 200 300 400 500 600 700 800 900 1000 e n e r g y p e r p u l s e ( j ) l = 220nh c = 0.4f 100c 25c 0.1 1 10 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 175c 7.0v vgs top 15v 10v 8.0v bottom 7.0v 0.1 1 10 v ds , drain-to-source voltage (v) 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 7.0v vgs top 15v 10v 8.0v bottom 7.0v downloaded from: http:///
4 www.irf.com fig 11. maximum drain current vs. case temperature fig 8. typical source-drain diode forward voltage fig 12. maximum safe operating area fig 7. typical e pulse vs.temperature fig 10. typical gate charge vs.gate-to-source voltage fig 9. typical capacitance vs.drain-to-source voltage 25 50 75 100 125 150 temperature (c) 0 200 400 600 800 1000 1200 1400 e n e r g y p e r p u l s e ( j ) l = 220nh c= 0.4f c= 0.3f c= 0.2f 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 100 120 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 160v v ds = 100v v ds = 40v i d = 46a 25 50 75 100 125 150 175 t c , casetemperature (c) 0 10 20 30 40 50 60 70 i d , d r a i n c u r r e n t ( a ) 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1sec 10sec operation in this area limited by r ds (on) 100sec downloaded from: http:///
www.irf.com 5 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 17. maximum effective transient thermal impedance, junction-to-case fig 15. threshold voltage vs. temperature fig 14. maximum avalanche energy vs. temperature fig 13. on-resistance vs. gate voltage fig 16. typical repetitive peak current vs. case temperature ri (c/w) i (sec) 0.08698 0.0000740.2112 0.001316 0.1506 0.009395 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 25 50 75 100 125 150 175 case temperature (c) 0 40 80 120 160 200 r e p e t i t i v e p e a k c u r r e n t ( a ) ton= 1s duty cycle = 0.25 half sine wave square pulse 5 6 7 8 9 10 v gs , gate-to-source voltage (v) 0.00 0.04 0.08 0.12 0.16 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) t j = 25c t j = 125c i d = 46a 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 8.6a 14a bottom 39a downloaded from: http:///
6 www.irf.com fig 20a. switching time test circuit fig 20b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 19b. unclamped inductive waveforms fig 19a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 21a. gate charge test circuit fig 21b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 18.

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? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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www.irf.com 7 fig 21a. t st and e pulse test circuit fig 21b. t st test waveforms fig 21c. e pulse test waveforms downloaded from: http:///
8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/2007 to-220ab packages are not recommended for surface mount application.

repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.18mh, r g = 25 ? , i as = 39a. pulse width 400s; duty cycle 2%. r is measured at t j of approximately 90c. half sine wave with duty cycle = 0.25, ton=1sec.
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note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ downloaded from: http:///

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